| shape: | DIP |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Technics: | IGBT Module |
| Application: | Standard Generalized Integrated Circuit |
| Type: | Insulated Gate Bipolar Transistor |
| Operating Voltage: | 1200 V |
| Samples: |
|---|
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The IGBT transistor (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), both The advantages of the high input impedance of the MOSFET and the low on-voltage drop of the GTR are two advantages. The GTR saturation voltage is reduced, the current carrying density is large, but the driving current is large; the MOSFET driving power is small, the switching speed is fast, but the on-state voltage drop is large, and the current carrying density is small. The IGBT combines the advantages of the above two devices, and the driving power is small and the saturation voltage is reduced. The role of igbt is that it is very suitable for application in converter systems with a DC voltage of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields. How IGBTs work: IGBTs are a natural evolution of vertical power MOSFETs for high current, high voltage applications and fast end equipment. Since a source-drain channel is required to achieve a higher breakdown voltage BVDSS, and this channel has a high resistivity, resulting in a high RDS(on) value of the power MOSFET, the IGBT eliminates these existing power MOSFETs. main disadvantage. Although the latest generation of power MOSFET devices have greatly improved the RDS(on) characteristics, at high levels, the power conduction losses are still much higher than in IGBT technology. The lower voltage drop, the ability to translate into a low VCE(sat), and the IGBT structure, support higher current densities compared to a standard bipolar device, and simplify the IGBT driver schematic.
1.Pinout:
2. Absolute Maximum Ratings (Tj = 25°C, unless otherwise noted):
3. Electrical Characteristics (Tj = 25°C, unless otherwise noted) :
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in CAL technology
• Highly reliable spring contacts for electrical connections
why choose us :
advantage:
1.Produce Range
Yangjiang RUIXIAO Enterprise Co,.Ltd,major in the electronic component , who have wide range of products,
such as IC,resistor , capacitor , mosfet , diodes, module , LED, relay, lcd. pcb board . and so. the brand involves:SHARP, POWER, , NS, ON, ST , IR, VISHAY , TOSHIBA, FAIRCHILD,MICROCHIP, ATMEL,EVERYLIGHT all the kinds of electronic component you need will be find in here.
2.Production workshop
3.Scope of application
the product is widely used in Automotive industry control,new energy industry,Audio,Home appliances equipment,Communication industry.it can meet the diverse needs of customers
4.service:
with the "User first, customer first" Company motto, quality assurance , economic price , fast Delivery time is our only faith. we will try our best to make every customer to enjoy the the most flexible,efficient services.We sincere hope that we can seek the common development and cooperation with the customer together to achieve a win-win situation.
5.Logistics:
we can send the goods to the customer's country directly by the international logistics. no matter send by air or by sea.
we will try our best to let the customer to get the parcel more convenient .
(noted:Not bear any fee and tax of the transportation cost.)
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