Certification: | RoHS, Isc |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Installation: | Solder |
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1.MAXIMUM RATINGS | |||
Rating | Symbol | Tip36c | Unit |
Collector-Emitter Voltage | V CEO | 100V | Vdc |
Collector-Bass Voltage | V CB | 100V | Vdc |
Emitter-Bass Voltage | V EB | 5.0 | Vdc |
Colleator Current-Continuous Peak(1) |
I C | 25 40 |
Adc |
Base Current-Continuous | I B | 5.0 | Adc |
Total Power Dissipation @TC=25ºC Derate above 25ºC |
P D | 125 1.0 |
Watts W/ºC |
Operating and Storage Junction Temperature Range |
T J , T stg | -65 To +150 | ºC |
Unclamped inductive load | E SB | 90 | mJ |
THERMAL CHARACTERISTICS | |||
Characteristic | Symbol | max | Unit |
Thermal Resistance, Junction to Case | R θJC | 1.0 | ºC/W |
Junction-To-Free-Air Thermal Resistance | R θJA | 35.7 | ºC/W |
Characteristic | Symbol | Min | Max | Unit |
OFF CHARACTERISTICS | ||||
Collector-Emitter Sustaining Voltage (1) (I C = 30 mA, I B = 0) |
V CEO(sus) | 100 | -- | Vdc |
Collector-Emitter Cutoff Current (V CE = 30 V, I B = 0) (V CE = 60 V, I B = 0) |
I CEO | -- -- |
1.0 | mA |
Collector-Emitter Cutoff Current (V CE = Rated V CEO , V EB = 0) |
I CES | -- | 0.7 | mA |
Emitter-Base Cutoff Current (V EB = 5.0 V, I C = 0) |
I EBO | -- | 1.0 | mA |
ON CHARACTERISTICS (1) | ||||
DC Current Gain (I C = 1.5 A, V CE = 4.0 V) (I C = 15 A, V CE = 4.0 V) |
h FE | 25 15 |
--- 75 |
____ |
Collector-Emitter Saturation Voltage (I C = 15 A, I B = 1.5 A) (I C = 25 A, I B = 5.0 A) |
V CE(sat) | -- -- |
1.8 4.0 |
Vdc |
Base-Emitter On Voltage (I C = 15 A, V CE = 4.0 V) (I C = 25 A, V CE = 4.0 V) |
V BE(on) | -- ____ |
2.0 4.0 |
Vdc |
DYNAMIC CHARACTERISTICS | ||||
Small-Signal Current Gain (I C = 1.0 A, V CE = 10 V, f = 1.0 kHz) |
h fe | 25 | ____ | ____ |
Current-Gain - Bandwidth Product (I C = 1.0 A, V CE = 10 V, f = 1.0 MHz) |
f T | 3.0 | ____ | MHz |