| Encapsulation Structure: | Plastic Sealed Transistor |
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| Certification: | RoHS |
| Luminous Intensity: | Standard |
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Schottky diodes are metal-semiconductor devices made of precious metals (gold, silver, aluminum, platinum, etc.) A as the anode and N-type semiconductor B as the cathode. The barrier formed on the contact surface of the two has rectification characteristics. Because there are a large number of electrons in N-type semiconductors, and there are only a very small amount of free electrons in noble metals, electrons diffuse from the high concentration of B to the low concentration of A. Obviously, there are no holes in metal A, and there is no diffusion movement of holes from A to B. As electrons continue to diffuse from B to A, the electron concentration on the surface of B gradually decreases, and the electrical neutrality of the surface is destroyed, so a potential barrier is formed, and the direction of the electric field is B→A. But under the action of this electric field, the electrons in A will also produce a drifting movement from A→B, thereby weakening the electric field formed by the diffusion movement. When a space charge region with a certain width is established, the drifting movement of electrons caused by the electric field and the diffusion movement of electrons caused by different concentrations reach a relative balance, forming a Schottky barrier.
The internal circuit structure of a typical Schottky rectifier is based on an N-type semiconductor, and an N-epitaxial layer with arsenic as a dopant is formed on it. The anode uses materials such as molybdenum or aluminum to make a barrier layer. Use silicon dioxide (SiO2) to eliminate the electric field in the edge area and improve the withstand voltage of the tube. The N-type substrate has a small on-state resistance, and its doping concentration is 100% higher than that of the H-layer. An N+ cathode layer is formed under the substrate, and its function is to reduce the contact resistance of the cathode. By adjusting the structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal, as shown in the figure. When a forward bias is applied to both ends of the Schottky barrier (the anode metal is connected to the positive pole of the power supply, and the N-type substrate is connected to the negative pole of the power supply), the Schottky barrier layer becomes narrower and its internal resistance becomes smaller; on the contrary, if When reverse bias is applied to both ends of the Schottky barrier, the Schottky barrier layer becomes wider and its internal resistance becomes larger.
In summary, the structure principle of Schottky rectifier is very different from PN junction rectifier. PN junction rectifier is usually called junction rectifier, and metal-half-conductor rectifier is called Schottky rectifier. . Schottky rectifier diode (SBD) is a rectifier diode with Schottky characteristic "metal semiconductor junction". Its forward starting voltage is low. In addition to the tungsten material, the metal layer can also be made of gold, molybdenum, nickel, titanium and other materials. It is widely used for its fast switching speed, large rectified current, voltage drop and low power consumption, and is especially suitable for high-frequency rectifier circuits and large current rectifier circuits.
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Schottky diode Schottky diode, also known as Schottky barrier diode (abbreviated as SBD), is a low-power, ultra-high-speed semiconductor device. The most notable feature is that the reverse recovery time is extremely short (can be as small as a few nanoseconds), and the forward voltage drop is only about 0.4V. It is mostly used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes, protection diodes, and also useful as rectifier diodes and small-signal detector diodes in circuits such as microwave communications. It is more common in communication power supplies, inverters, etc. A typical application is in the switching circuit of a bipolar transistor BJT. By connecting a Shockley diode to the BJT to clamp, the transistor is actually close to the off state when the transistor is on, thereby increasing the switching speed of the transistor. This method is a technique used in the TTL internal circuits of typical digital ICs such as 74LS, 74ALS, and 74AS. The biggest feature of Schottky diodes is that the forward voltage drop VF is relatively small. In the case of the same current, its forward voltage drop is much smaller. In addition, its recovery time is short. It also has some shortcomings: the withstand voltage is relatively low, and the leakage current is slightly larger. It must be fully considered when selecting.
• Low Forward Voltage
• Low Power Loss / High Efficiency
• High Surge Capacity
• 175°C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• Pb−Free Package is Available
• Power Supply − Output Rectification
• Power Management
• Instrumentation
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