7mbr50u4p120-50 IGBT Discrete Part and Module Insulated Gate Bipolar Transistor, Power Supply, Medical Equipment, Welding Machine, Home Appliance

• shape: DIP
• Conductive Type: Bipolar Integrated Circuit
• Technics: Semiconductor IC
• Application: Standard Generalized Integrated Circuit
• Type: Digital / Analog IC
• Polarity: N-Channel
• Model NO.: 7MBR50U4P120-50
• Power Dissipation (Max): 275 W
• Operating Temperature: -40~ 150(Celsius)
• Number of Pins: 26
• Operating Voltage: 1200V
• Operating Current: 50A
• Installation Method: PCB
• Certification: RoHS
• Transport Package: Box
• Origin: Make in China
• HS Code: 8541290000
• Production Capacity: 100000pieces/Years

Product Description

Product Description

IGBT transistor (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), both The high input impedance of MOSFET and the low on-voltage drop of GTR have two advantages. The saturation voltage of GTR is reduced, the current-carrying density is high, but the driving current is large; the MOSFET driving power is small, the switching speed is fast, but the conduction voltage drop is large, and the current-carrying density is small. IGBT combines the advantages of the above two devices, with low driving power and reduced saturation voltage. What is the role of igbt: It is very suitable for
application in the fields of AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields with a DC voltage of 600V and above. IGBT working principle: IGBT is a natural evolution of vertical power MOSFETs used in high current, high voltage applications and fast terminal equipment. Since the realization of a higher breakdown voltage BVDSS requires a source-drain channel, and this channel has a high resistivity, the power MOSFET has the characteristic of high RDS(on) value. The IGBT eliminates these features of the existing power MOSFET. The main disadvantage. Although the latest generation of power MOSFET devices have greatly improved RDS(on) characteristics, at high levels, the power conduction loss is still much higher than that of IGBT technology. The lower voltage drop, the ability to convert into a low VCE (sat), and the structure of the IGBT, compared with a standard bipolar device, can support higher current density and simplify the schematic diagram of the IGBT driver.  
 

 

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Our Advantages

why choose us :
advantage:
1.Produce Range
Yangjiang RUIXIAO Enterprise Co,.Ltd,major in the electronic component , who have wide range of products,
such as IC,resistor , capacitor , mosfet , diodes, module , LED, relay, lcd. pcb board . and so.  the brand involves:SHARP, POWER, , , NS, ON, ST , IR, VISHAY , TOSHIBA, FAIRCHILD,MICROCHIP, ATMEL,EVERYLIGHT all the kinds  of electronic component you need will be find in  here.



2.Scope of application
the product  is widely used in Automotive industry control,new energy industry,Audio,Home appliances equipment,Communication industry.it can  meet the diverse needs of customers

3.service:
with the  "User first, customer first" Company motto, quality assurance ,  economic price , fast Delivery time is our only faith. we will try our best to make every customer to enjoy the  the most flexible,efficient  services.We sincere hope that we can seek the common development and cooperation with  the customer together to achieve a win-win situation.

Packaging & Shipping

Logistics:
we can send the goods to the customer's country directly by the international logistics.  no matter send by air or by sea. 
we will try our best to let the customer to get the parcel more convenient .
(noted:Not bear  any fee and tax of the transportation cost.)